是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G4 | Reach Compliance Code: | compliant |
风险等级: | 5.61 | 最大集电极电流 (IC): | 1.5 A |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 63 | JESD-30 代码: | R-PDSO-G4 |
元件数量: | 1 | 端子数量: | 4 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | PNP |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BD140G-10-T100-K | UTC |
获取价格 |
PNP SILICON TRANSISTOR | |
BD140G-10-T60-K | UTC |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti | |
BD140G-10-TM3-T | UTC |
获取价格 |
PNP SILICON TRANSISTOR | |
BD140G-16-T160-K | UTC |
获取价格 |
PNP SILICON TRANSISTOR | |
BD140G-16-T60-K | UTC |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti | |
BD140G-16-TM3-T | UTC |
获取价格 |
PNP SILICON TRANSISTOR | |
BD140G-6-T60-K | UTC |
获取价格 |
PNP SILICON TRANSISTOR | |
BD140G-6-TM3-T | UTC |
获取价格 |
PNP SILICON TRANSISTOR | |
BD140L-06-T60-K | UTC |
获取价格 |
Power Bipolar Transistor | |
BD140L-06-T6C-K | UTC |
获取价格 |
Power Bipolar Transistor |