Datasheet > BD142

BD142

更新时间： 2024-11-02 06:41:51

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	108K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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BD142 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

BD142

DESCRIPTION

·With TO-3 package

·Low collector saturation voltage

·High dissipation rating

APPLICATIONS

·LF large signal power amplification

·Intended for a wide variety of intermediate

power applications.

·Suited for use in audio and inverter circuits

at 12V

PINNING (See Fig.2)

DESCRIPTION

Base

Emitter

Collector

Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

UNIT

Open base

Open collector

I_B

Base current

P_T

Total power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

117

ꢀ

T_j

-65~200

T_stg

ꢀ

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal resistance from junction to case

1.5

ꢀ/W

12 3

中文翻译

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