Datasheet > BD137_15

BD137_15

更新时间： 2022-02-26 12:25:10

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描述
NPN POWER TRANSISTORS

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BD137_15 数据手册

BD137

NPN SILICON TRANSISTOR



ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

RATINGS

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Peak Collector Current

Peak Base Current

1.5

3.0

0.5

1.25

I_CM

l_BM

Power Dissipation (T_A=25°C)

Junction Temperature

Operating Temperature

Storage Temperature

P_D

°C

T_J

+150

T_OPR

T_STG

-55~+150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



ELECTRICAL CHARACTERISTICS (T_J=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_CEO

TEST CONDITIONS

I_C=30mA, I_B=0

I_E=0, V_CB=30V

MIN TYP MAX UNIT

Collector-Emitter Voltage (Note)

Collector Cut-Off Current

Emitter Cut-Off Current

100 nA

I_CBO

I_EBO

I_E=0, V_CB=30V, T_J=125°C

I_C=0, V_EB=5V

μA

I_C=5mA

DC Current Gain (Note)

V_CE=2V

I_C=150mA

I_C=500mA

160

h_FE

BD137-6

BD137-10

100

160

0.5

DC Current Gain (Note)

I_C=150mA, V_CE=2V

Collector-Emitter Saturation Voltage (Note)

Base-Emitter Voltage (Note)

Transition Frequency

V_CE(SAT)I_C=500mA, I_B=50mA

V_BE

f_T

I_C=500mA, V_CE=2V

I_C=500mA, V_CE=5V, f=100MHz

190

MHz

Note: Pulse Test: Pulse Width ≤ 300μS, Duty Cycle ≤ 2%.

UNISONIC TECHNOLOGIES CO., LTD

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QW-R204-033.a

www.unisonic.com.tw

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