是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | SIP | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.59 |
Is Samacsys: | N | 最大集电极电流 (IC): | 1.5 A |
集电极-发射极最大电压: | 45 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 100 | JEDEC-95代码: | TO-126 |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | PNP | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BD136G-16-TM3-T | UTC |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-251, Plasti | |
BD136G-6-T60-K | UTC |
获取价格 |
PNP SILICON TRANSISTOR | |
BD136G-6-TM3-T | UTC |
获取价格 |
PNP SILICON TRANSISTOR | |
BD136L-06-T60-K | UTC |
获取价格 |
Power Bipolar Transistor | |
BD136L-06-TM3-T | UTC |
获取价格 |
Power Bipolar Transistor | |
BD136L-10-T60-K | UTC |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti | |
BD136L-10-TM3-T | UTC |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-251, Plasti | |
BD136L-16-T60-K | UTC |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plasti | |
BD136L-16-TM3-T | UTC |
获取价格 |
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-251, Plasti | |
BD136L-6-T60-K | UTC |
获取价格 |
PNP SILICON TRANSISTOR |