生命周期: | Active | 零件包装代码: | SON |
包装说明: | 1 X 1 MM, 0.60 MM PITCH, ROHS COMPLIANT, SSON-4 | 针数: | 4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.7 |
最大输入电压: | 5.5 V | 最小输入电压: | 1.7 V |
JESD-30 代码: | S-PDSO-N4 | 长度: | 1 mm |
功能数量: | 1 | 端子数量: | 4 |
工作温度TJ-Max: | 125 °C | 最大输出电流 1: | 0.2 A |
最大输出电压 1: | 1.225 V | 最小输出电压 1: | 1.175 V |
标称输出电压 1: | 1.2 V | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | HVSON | 封装形状: | SQUARE |
封装形式: | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | 调节器类型: | FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR |
座面最大高度: | 0.6 mm | 表面贴装: | YES |
技术: | CMOS | 端子形式: | NO LEAD |
端子节距: | 0.65 mm | 端子位置: | DUAL |
宽度: | 1 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BD12TD2WNVX-TL | ROHM |
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Ultra Small Package CMOS LDO Regulators suitable for High-density Mounting | |
BD130 | COMSET |
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NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS | |
BD130_12 | COMSET |
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SILICON TRANSISTOR HOMOBASE | |
BD13003B | SECOS |
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NPN Plastic Encapsulated Transistor | |
BD13003B_18 | SECOS |
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NPN Plastic-Encapsulated Transistor | |
BD13003B-A1 | SECOS |
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NPN Plastic-Encapsulated Transistor | |
BD13003B-A2 | SECOS |
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NPN Plastic-Encapsulated Transistor | |
BD131 | NXP |
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NPN power transistor | |
BD131 | COMSET |
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SILICON PLANAR EPITAXIAL POWER TRANSISTORS | |
BD131 | SAVANTIC |
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Silicon NPN Power Transistors |