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BD13003B_18 PDF预览

BD13003B_18

更新时间: 2024-11-08 01:14:43
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SECOS /
页数 文件大小 规格书
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描述
NPN Plastic-Encapsulated Transistor

BD13003B_18 数据手册

 浏览型号BD13003B_18的Datasheet PDF文件第2页 
BD13003B  
1.5A, 700V  
NPN Plastic-Encapsulated Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
FEATURES  
TO-126  
Power Switching Applications  
CLASSIFICATION OF tS  
Product-Rank  
BD13003B-A1  
BD13003B-A2  
1Emitter  
2Collector  
3Base  
Range  
2-2.5 (µs)  
2.5-3 (µs)  
A
B
E
F
MARKING  
C
D
13003  
=Solid dot  
N
H
J
L
*Solid dot=Green molding compound device, if none, the normal device.  
M
K
ORDER INFORMATION  
Collector  
2
Part Number  
BD13003B-  
BD13003B--C  
Type  
G
Millimeter  
Millimeter  
REF.  
REF.  
Lead (Pb)-free  
Min.  
Max.  
Min.  
Max.  
1.50  
0.60  
0.86  
2.30  
1.37  
3.20  
A
B
C
D
E
F
7.40  
2.50  
7.80  
2.90  
H
J
K
L
M
N
1.10  
0.45  
0.66  
2.10  
1.17  
3.00  
1
Base  
Lead (Pb)-free and Halogen-free  
10.60  
15.30  
3.70  
11.00  
15.70  
3.90  
*=Rank  
3
3.90  
4.10  
Emitter  
G
2.29 TYP.  
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
700  
400  
9
Unit  
Collector-Base Voltage  
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
Collector Current-Continuous  
Collector Power Dissipation  
Junction and Storage Temperature  
1.5  
A
PC  
1.5  
W
°C  
TJ, TSTG  
150, -55~150  
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
IC=5mA, IE=0  
IC=10mA, IB=0  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
700  
-
-
-
-
V
V
V
400  
9
-
-
-
IE=2mA, IC=0  
-
1
VCB=700V, IE=0  
VCE=400V, IB=0  
VEB=9V, IC=0  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
mA  
mA  
ICEO  
-
-
0.5  
1
IEBO  
-
-
20  
5
-
-
30  
-
VCE=5V, IC=0.5A  
VCE=5V, IC=1.5A  
IC=1A, IB=0.25A  
IC=1A, IB=0.25A  
hFE  
-
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Transition Frequency  
Fall time  
VCE(sat)  
-
0.6  
1.2  
-
V
V
VBE(sat)  
-
-
fT  
tF  
tS  
-
5
0.5  
-
MHz VCE=10V, IC=100mA, f=1MHz  
-
-
µS  
µS  
IC=1A, IB1= -IB2=0.2A, VCC=100V  
IC=250mA (UI9600)  
Storage time  
2
3
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
14-Aug-2018 Rev. C  
Page 1 of 2  

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