Datasheet > BD131_12

BD131_12

更新时间： 2024-02-01 13:54:40

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COMSET		晶体晶体管局域网
页数	文件大小	规格书
2页	62K
描述
SILICON PLANAR EPITAXIAL POWER TRANSISTORS

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中文翻译

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数据手册

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BD131_12 数据手册

NPN BD131

SILICON PLANAR EPITAXIAL POWER TRANSISTORS

The BD131are NPN transistors mounted in Jedec TO-126 plastic package.

Medium power applications.

PNP complements are BD132

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

V_CEO

V_CBO

V_EBO

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

I_C

I_CM

I_BM

0.5

I_C

I_B

Collector Current

Base current (peak value)

Reverse base current (peak value)

Total power Dissipation

Junction Temperature

P_T

T_J

T_Stg

@ T_mb= 60°C

°C

150

-65 to +150

Storage Temperature

THERMAL CHARACTERISTICS

Symbol

R_thJ-mb

Ratings

Value

Unit

Thermal Resistance, Junction to mouting base

K/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Max Unit

I_E=0 , V_CB=40 V

I_E=0 , V_CB=40 V ,T_j= 150°C

I_C=0, V_EB=3 V

I_C=0.5 A, I_B=50 mA

I_C=2.0 A, I_B=200 mA

I_C=0.5 A, I_B=50 mA

I_C=2.0 A, I_B=200 mA

V_CE=12 V, I_C=500m A

V_CE=1 V, I_C=2 A

500

0.3

1.2

0.7

1,5

I_CBO

Collector cut-off current

µA

I_EBO

Emitter cut-offcurrent

Collector-Emitter saturation

Voltage

Base-Emitter saturation

Voltage

V_CE(SAT)

V_BE(SAT)

h_FE

DC Current Gain

18/10/2012

COMSET SEMICONDUCTORS

1 | 2

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