Datasheet > BD131

BD131

更新时间： 2024-09-17 06:41:51

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管局域网
页数	文件大小	规格书
3页	116K
描述
Silicon NPN Power Transistors

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中文翻译

获取价格

数据手册

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BD131 数据手册

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BD131

DESCRIPTION

·Complement to type BD132

·With TO-126 package

·High current (Max: 3A)

·Low voltage (Max: 45V)

APPLICATIONS

·For general purpose power applications

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

Absolute maximum ratings (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter -base voltage

Collector current (DC)

Collector current-Peak

Base current-Peak

CONDITIONS

VALUE

UNIT

Open emitter

Open base

Open collector

I_CM

I_BM

0.5

P_T

Total power dissipation

Junction temperature

Storage temperature

_mb≤60℃

℃

T_j

150

-65~150

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

100

UNIT

K/W

R_{th j-a}

Thermal resistance from junction to ambient

R_{th j-mb}

Thermal resistance from junction to mounting base

12 3

中文翻译

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