Datasheet > BD130

BD130

更新时间： 2022-10-15 10:45:50

品牌	Logo	应用领域
COMSET		晶体晶体管开关
页数	文件大小	规格书
3页	151K
描述
NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS

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BD130 数据手册

BD130

NPN SILICON TRANSISTOR

POWER LINERAR AND SWITCHING APPLICATIONS

The BD130 is a silicon epitaxial-base NPN transistor in JEDEC TO-

3 metal case. It is intended for power switching circuits, series and

shunt regulators, output stages and high fidelity amplifiers.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

Collector-Emitter Voltage

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

V_CEO

V_CBO

V_CEX

I_C

100

V_BE=-1.5 V

Base Current

I_B

Power Dissipation

@ T_C= 45°

P_T

T_J

100

Watts

Junction Temperature

-55 to +200

°C

Storage Temperature

T_S

COMSET SEMICONDUCTORS

1/3

12 3

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型号	品牌	描述	获取价格	数据表
BD130_12	COMSET	SILICON TRANSISTOR HOMOBASE	获取价格
BD13003B	SECOS	NPN Plastic Encapsulated Transistor	获取价格
BD13003B_18	SECOS	NPN Plastic-Encapsulated Transistor	获取价格
BD13003B-A1	SECOS	NPN Plastic-Encapsulated Transistor	获取价格
BD13003B-A2	SECOS	NPN Plastic-Encapsulated Transistor	获取价格
BD131	NXP	NPN power transistor	获取价格