是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.53 | Is Samacsys: | N |
最大集电极电流 (IC): | 1 A | 配置: | Single |
最小直流电流增益 (hFE): | 63 | JESD-609代码: | e3 |
最高工作温度: | 150 °C | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 1 W | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCX55-10,115 | NXP |
获取价格 |
60 V, 1 A NPN medium power transistor SOT-89 3-Pin | |
BCX55-10-BG | ZETEX |
获取价格 |
SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS | |
BCX55-10BK | CENTRAL |
获取价格 |
Transistor | |
BCX55-10E6327 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon | |
BCX55-10E6433 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon | |
BCX55-10LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 | |
BCX55-10-Q | NEXPERIA |
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60 V, 1 A NPN medium power transistorsProduction | |
BCX55-10T | NEXPERIA |
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60 V, 1 A NPN power bipolar transistorsProduction | |
BCX55-10T/R | ETC |
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TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | SOT-89 | |
BCX5510TA | DIODES |
获取价格 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89 |