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BCX55-10,115 PDF预览

BCX55-10,115

更新时间: 2024-10-01 14:41:03
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
22页 1120K
描述
60 V, 1 A NPN medium power transistor SOT-89 3-Pin

BCX55-10,115 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOT-89包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:compliant
HTS代码:8541.29.00.75风险等级:3.71
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):63JEDEC-95代码:TO-243AA
JESD-30 代码:R-PSSO-F3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:FLAT
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):130 MHz
Base Number Matches:1

BCX55-10,115 数据手册

 浏览型号BCX55-10,115的Datasheet PDF文件第2页浏览型号BCX55-10,115的Datasheet PDF文件第3页浏览型号BCX55-10,115的Datasheet PDF文件第4页浏览型号BCX55-10,115的Datasheet PDF文件第5页浏览型号BCX55-10,115的Datasheet PDF文件第6页浏览型号BCX55-10,115的Datasheet PDF文件第7页 
BCP55; BCX55; BC55PA  
60 V, 1 A NPN medium power transistors  
Rev. 8 — 24 October 2011  
Product data sheet  
1. Product profile  
1.1 General description  
NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.  
Table 1. Product overview  
Type number[1]  
Package  
NXP  
PNP complement  
JEITA  
SC-73  
SC-62  
-
JEDEC  
BCP55  
BCX55  
BC55PA  
SOT223  
SOT89  
SOT1061  
-
BCP52  
BCX52  
BC52PA  
TO-243  
-
[1] Valid for all available selection groups.  
1.2 Features and benefits  
High current  
Three current gain selections  
High power dissipation capability  
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  
Leadless very small SMD plastic package with medium power capability (SOT1061)  
AEC-Q101 qualified  
1.3 Applications  
Linear voltage regulators  
Power management  
MOSFET drivers  
Amplifiers  
Low-side switches  
Battery-driven devices  
1.4 Quick reference data  
Table 2.  
Quick reference data  
Symbol Parameter  
Conditions  
Min  
-
Typ  
Max  
60  
Unit  
V
VCEO  
IC  
collector-emitter voltage open base  
collector current  
-
-
-
-
-
-
-
1
A
ICM  
hFE  
peak collector current  
DC current gain  
single pulse; tp 1 ms  
-
2
A
[1]  
[1]  
[1]  
VCE = 2 V; IC = 150 mA  
VCE = 2 V; IC = 150 mA  
VCE = 2 V; IC = 150 mA  
63  
63  
100  
250  
160  
250  
hFE selection -10  
hFE selection -16  
[1] Pulse test: tp 300 s; = 0.02.  
 
 
 
 
 
 
 

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