是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PSSO-F3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.16 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 1 A |
集电极-发射极最大电压: | 60 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 100 | JEDEC-95代码: | TO-243AA |
JESD-30 代码: | R-PSSO-F3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
参考标准: | AEC-Q101; IEC-60134 | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | FLAT |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 180 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
BCX55-10 | NEXPERIA |
类似代替 |
60 V, 1 A NPN medium power transistorsProduction | |
BSR41 | NEXPERIA |
功能相似 |
60 V, 1 A NPN medium power transistorProduction | |
BCX55 | NEXPERIA |
功能相似 |
60 V, 1 A NPN medium power transistorsProduction |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCX55-16,115 | ETC |
获取价格 |
TRANS NPN 60V 1A SOT89 | |
BCX55-16,135 | NXP |
获取价格 |
60 V, 1 A NPN medium power transistor SOT-89 3-Pin | |
BCX55-16/T1 | ETC |
获取价格 |
TRANSISTOR SOT-89 | |
BCX55-16/T3 | NXP |
获取价格 |
TRANSISTOR 1 A, 60 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BCX55-16BK | CENTRAL |
获取价格 |
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 | |
BCX55-16-BM | ZETEX |
获取价格 |
SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS | |
BCX55-16E6327 | ROCHESTER |
获取价格 |
1000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR | |
BCX55-16E6433 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon | |
BCX5516E6433HTMA1 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMP | |
BCX55-16LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 |