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BSR41 PDF预览

BSR41

更新时间: 2024-11-27 11:14:35
品牌 Logo 应用领域
安世 - NEXPERIA 开关晶体管
页数 文件大小 规格书
8页 213K
描述
60 V, 1 A NPN medium power transistorProduction

BSR41 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:PLASTIC, SC-62, TO-243, 3 PINReach Compliance Code:compliant
风险等级:5.65外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):50
JEDEC-95代码:TO-243AAJESD-30 代码:R-PSSO-F3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN表面贴装:YES
端子面层:Tin (Sn)端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

BSR41 数据手册

 浏览型号BSR41的Datasheet PDF文件第2页浏览型号BSR41的Datasheet PDF文件第3页浏览型号BSR41的Datasheet PDF文件第4页浏览型号BSR41的Datasheet PDF文件第5页浏览型号BSR41的Datasheet PDF文件第6页浏览型号BSR41的Datasheet PDF文件第7页 
BSR41  
60 V, 1 A NPN medium power transistor  
1 October 2022  
Product data sheet  
1. General description  
NPN general-purpose transistor in a medium power SOT89 (SC-62) Surface-Mounted Device  
(SMD) plastic package. PNP complement: BSR31.  
2. Features and benefits  
High current (max. 1 A)  
Low voltage (max. 80 V)  
3. Applications  
Linear voltage regulators  
Low-side switches  
Battery-driven devices  
Power management  
MOSFET drivers  
Amplifiers  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
60  
V
IC  
collector current  
-
-
-
-
1
2
-
A
A
ICM  
hFE  
peak collector current single pulse; tp ≤ 1 ms  
-
DC current gain VCE = 5 V; IC = 100 µA; pulsed; tp ≤  
30  
300 µs; δ ≤ 0.01; Tamb = 25 °C  
VCE = 5 V; IC = 100 mA; pulsed; tp ≤  
300 µs; δ ≤ 0.01; Tamb = 25 °C  
100  
50  
-
-
300  
-
VCE = 5 V; IC = 500 mA; pulsed; tp ≤  
300 µs; δ ≤ 0.01; Tamb = 25 °C  
 
 
 
 

BSR41 替代型号

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