Datasheet > BCX55-10-Q

BCX55-10-Q

更新时间： 2024-10-02 11:12:11

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	223K
描述
60 V, 1 A NPN medium power transistorsProduction

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BCX55-10-Q 数据手册

BCX55-Q series

60 V, 1 A NPN medium power transistors

Rev. 1 — 14 July 2022

Product data sheet

1. General description

NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD)

plastic package.

Table 1. Product overview

Type number

Package

Nexperia

SOT89

NPN complement

JEITA

BCX55-Q

SC-62

BCX52-Q

BCX55-10-Q

BCX55-16-Q

BCX52-10-Q

BCX52-16-Q

2. Features and benefits

•

High current

Three current gain selections

High power dissipation capability

Exposed heatsink for excellent thermal and electrical conductivity

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Linear voltage regulators

Power management

Low-side switches

MOSFET drivers

Battery-driven devices

Amplifiers

4. Quick reference data

Table 2. Quick reference data

Symbol

V_CEO

I_C

Parameter

Conditions

Min

Typ

Max

Unit

collector-emitter voltage

collector current

peak collector current

DC current gain

BCX55-Q

open base

I_CM

single pulse; t_p≤ 1 ms

h_FE

V_CE= 2 V; I_C= 150 mA; T_amb= 25 °C [1]

250

160

250

BCX55-10-Q

[1]

BCX55-16-Q

100

[1] pulsed; t_p≤ 300 μs; δ ≤ 0.02

12 3 4 5 6 7...12

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