5秒后页面跳转
BCX52 PDF预览

BCX52

更新时间: 2024-11-23 22:28:55
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
2页 107K
描述
SURFACE MOUNT PNP SILICON TRANSISTOR

BCX52 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:SMALL OUTLINE, R-PSSO-F3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.04外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:60 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PSSO-F3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):1.2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

BCX52 数据手册

 浏览型号BCX52的Datasheet PDF文件第2页 
TM  
BCX51  
BCX52  
BCX53  
Central  
Semiconductor Corp.  
SURFACE MOUNT  
DESCRIPTION:  
PNP SILICON TRANSISTOR  
The CENTRAL SEMICONDUCTOR BCX51,  
BCX52, and BCX53 types are PNP Silicon  
Transistors manufactured by the epitaxial planar  
process, epoxy molded in a surface mount  
package, designed for high current general  
purpose amplifier applications.  
SOT-89 CASE  
MAXIMUM RATINGS (T =25°C)  
A
BCX51  
45  
BCX52  
60  
BCX53  
100  
UNITS  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
V
CBO  
CEO  
EBO  
45  
60  
80  
V
5.0  
V
I
1.0  
A
C
Peak Collector Current  
Base Current  
I
1.5  
A
CM  
I
100  
200  
1.2  
mA  
mA  
W
B
Peak Base Current  
Power Dissipation  
I
BM  
P
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
J stg  
-65 to +150  
104  
°C  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
100  
10  
UNITS  
nA  
µA  
nA  
V
I
I
I
V
V
V
=30V  
CBO  
CBO  
EBO  
CB  
CB  
EB  
=30V, T =125°C  
A
=5.0V  
100  
BV  
BV  
BV  
BV  
BV  
BV  
I =100µA (BCX51)  
45  
60  
CBO  
CBO  
CBO  
CEO  
CEO  
CEO  
CE(SAT)  
BE(ON)  
FE  
C
I =100µA (BCX52)  
V
C
I =100µA (BCX53)  
100  
45  
V
C
I =10mA (BCX51)  
V
C
I =10mA (BCX52)  
60  
V
C
I =10mA (BCX53)  
80  
V
C
V
V
I =500mA, I =50mA  
0.5  
1.0  
V
C
B
V
=2.0V, I =500mA  
V
CE  
CE  
CE  
CE  
B
h
h
V
V
V
=2.0V, I =5.0mA  
63  
63  
C
=2.0V, I =150mA  
250  
160  
250  
FE  
C
h
=2.0V, I =150mA  
C
FE  
FE  
FE  
(BCX51-10, BCX52-10, BCX53-10)  
63  
h
h
V
=2.0V, I =150mA  
C
CE  
(BCX51-16, BCX52-16, BCX53-16)  
=2.0V, I =500mA  
100  
40  
V
CE  
C
f
V
=5.0V, I =10mA, f=100MHz  
50  
MHz  
T
CE  
C
R1 ( 18-December 2001)  

与BCX52相关器件

型号 品牌 获取价格 描述 数据表
BCX52,115 ETC

获取价格

TRANS PNP 60V 1A SOT89
BCX52_15 WINNERJOIN

获取价格

PNP TRANSISTOR
BCX5210 DIODES

获取价格

PNP, 60V, 1A, SOT89
BCX52-10 NEXPERIA

获取价格

60 V, 1 A PNP medium power transistorProduction
BCX52-10 NXP

获取价格

PNP medium power transistors
BCX52-10 INFINEON

获取价格

PNP Silicon AF Transistors
BCX52-10 MCC

获取价格

PNP Plastic-Encapsulate Transistors
BCX52-10 CENTRAL

获取价格

SURFACE MOUNT PNP SILICON TRANSISTOR
BCX52-10 KEXIN

获取价格

PNP Medium Power Transistors
BCX52-10 TYSEMI

获取价格

High current (max. 1 A). Low voltage (max. 80 V). Emitter-base voltage VEBO -5 V