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BCX52-10 PDF预览

BCX52-10

更新时间: 2024-11-24 06:41:47
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科信 - KEXIN 晶体晶体管
页数 文件大小 规格书
2页 53K
描述
PNP Medium Power Transistors

BCX52-10 数据手册

 浏览型号BCX52-10的Datasheet PDF文件第2页 
SMD Type  
Transistors  
PNP Medium Power Transistors  
BCX51,BCX52,BCX53  
Features  
High current (max. 1 A).  
Low voltage (max. 80 V).  
Absolute Maximum Ratings Ta = 25  
Parameter  
Symbol  
VCBO  
Rating  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
BCX51  
-45  
-60  
BCX52  
BCX53  
BCX51  
BCX52  
BCX53  
V
-100  
-45  
V
VCEO  
V
-60  
V
-80  
V
Emitter-base voltage  
Collector current  
VEBO  
IC  
-5  
V
-1  
A
Peak collector current  
Peak base current  
ICM  
-1.5  
A
IBM  
-200  
1.3  
mA  
W
Total power dissipation  
Storage temperature  
Junction temperature  
Operating ambient temperature  
Ptot  
Tstg  
Tj  
-65 to +150  
150  
Ramb  
Rth(j-a)  
Rth(j-s)  
-65 to +150  
94  
Thermal resistance from junction to ambient  
Thermal resistance from junction to solder point  
K/W  
K/W  
14  
1
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TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89