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BCX52

更新时间: 2024-11-24 12:54:39
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管
页数 文件大小 规格书
1页 133K
描述
TRANSISTOR (PNP)

BCX52 数据手册

  
RoHS  
BCX52  
SOT-89  
1. BASE  
BCX52  
TRANSISTOR (PNP)  
FEATURES  
Power dissipation  
PCM:  
Collector current  
ICM:  
2. COLLECTOR  
3. EMITTER  
1
0.5  
-1  
W (Tamb=25)  
2
A
V
3
Collector-base voltage  
V(BR)CBO -60  
:
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic=-100µA , IE=0  
IC=-10mA , IB=0  
IE=-10µA, IC=0  
VCB=-30V, IE=0  
VEB=-5V, IC=0  
MIN  
-60  
-60  
-5  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
V
-0.1  
-0.1  
µA  
µA  
IEBO  
Emitter cut-off current  
63  
63  
100  
250  
160  
250  
DC current gain  
BCX52  
BCX52-10  
BCX52-16  
hFE(1)  
VCE=-2V, IC=-150mA  
hFE(2)  
hFE(3)  
V
CE=-2V, IC= -5mA  
63  
40  
VCE=-2V, IC=-500mA  
VCE(sat)  
VBE(ON)  
IC=-500 mA, IB=-50mA  
IC=- 500mA, VCE=-2V  
-0.5  
-1  
V
V
Collector-emitter saturation voltage  
Base-emitter voltage  
VCE= -5V, IC= -10mA  
f = 100MHz  
50  
MHz  
Transition frequency  
f T  
WEJ ELECTRONIC CO.,LTD  
BCX52=AE BCX52-10=AG BCX52-16=AM  
DEVICE MARKING  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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