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BCX13

更新时间: 2024-10-27 22:27:23
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体开关晶体管
页数 文件大小 规格书
4页 144K
描述
PNP Silicon AF Switching Transistor (For general AF applications High breakdown voltage)

BCX13 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.61
最大集电极电流 (IC):0.8 A配置:Single
最小直流电流增益 (hFE):25最高工作温度:150 °C
极性/信道类型:PNP最大功率耗散 (Abs):0.625 W
子类别:Other Transistors表面贴装:NO
Base Number Matches:1

BCX13 数据手册

 浏览型号BCX13的Datasheet PDF文件第2页浏览型号BCX13的Datasheet PDF文件第3页浏览型号BCX13的Datasheet PDF文件第4页 
PNP Silicon AF Switching Transistor  
BCX 13  
For general AF applications  
High breakdown voltage  
Low collector-emitter saturation voltage  
Complementary type: BCX 12 (NPN)  
2
3
1
Package1)  
Type  
Marking  
Ordering Code  
Pin Configuration  
1
2
3
BCX 13  
BCX 13  
Q62702-C26  
C
B
E
TO-92  
Maximum Ratings  
Parameter  
Symbol  
Values  
125  
125  
5
Unit  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
CE0  
CB0  
EB0  
V
V
V
I
I
I
I
C
800  
1
mA  
A
Peak collector current  
Base current  
CM  
B
100  
200  
625  
150  
mA  
Peak base current  
Total power dissipation, T  
Junction temperature  
BM  
C
= 66 ˚C  
Ptot  
mW  
˚C  
Tj  
Storage temperature range  
Tstg  
– 65 … + 150  
Thermal Resistance  
Junction - ambient  
Junction - case2)  
R
th JA  
th JC  
200  
135  
K/W  
R
1)  
For detailed information see chapter Package Outlines.  
Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.  
2)  
5.91  
Semiconductor Group  
1

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