Datasheet > BCX17

BCX17

更新时间： 2024-10-28 12:53:47

品牌	Logo	应用领域
TYSEMI		晶体晶体管光电二极管
页数	文件大小	规格书
1页	78K
描述
Low current (max. 100 mA). Low voltage (max. 32 V).Collector-base voltage VCBO -50V

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数据手册

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BCX17 数据手册

SMD Type

TransistIoCrs

Product specification

BCX17,BCX18

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Low current (max. 100 mA).

Low voltage (max. 32 V).

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

BCX17

-50

BCX18

-30

Unit

Collector-emitter voltage

Emitter-base voltage

-45

-25

-5

-500

-1000

-200

250

Collector current

Peak collector current

I^CM

Peak base current

I^BM

Total power dissipation *

Storage temperature

P^tot

-65 to +150

150

T^stg

Junction temperature

T^j

-65 to +150

500

Operating ambient temperature

Thermal resistance from junction to ambient *

Ramb

R^{th j-a}

K/W

* Transistor mounted on an FR4 printed-circuit board.

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Symbol

I^CBO

Testconditons

Min

Typ

Max

-100

-5

Unit

I^E= 0; V^CB= -20 V

I^CBO

ìA

IE = 0; VCB = -20 V; Tj = 100

I^C= 0; V^EB= -5 V

Emitter cutoff current

DC current gain

I^EBO

-100

600

I^C= -100 mA; V^CE= -1 V

IC = -300 mA; VCE = -1 V

I^C= -500 mA; V^CE= -1 V

100

h^FE

Collector-emitter saturation voltage

Base to emitter voltage

Collector capacitance

V^CE(sat)I^C= -500 mA; I^B= -50 mA

-620

-1.2

V^BE

C^C

f^T

I^C= -500 mA; V^CE= -1 V

I^E= ie = 0; V^CB= -10 V; f = 1 MHz

I^C= -10 mA; V^CE= -5 V; f = 100 MHz

Transition frequency

MHz

hFE Classification

TYPE

BCX17

BCX18

Marking

4008-318-123

http://www.twtysemi.com

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sales@twtysemi.com

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