Datasheet > BCX17

BCX17

更新时间： 2024-10-28 03:21:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体放大器晶体管光电二极管
页数	文件大小	规格书
3页	46K
描述
PNP General Purpose Amplifier

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替代型号

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BCX17 数据手册

BCX17

PNP General Purpose Amplifier

•

This device is esigned for general purpose amplifier and switching

application at current 0.5A.

•

Sourced from process 78.

SOT-23

Mark: T1

1. Base 2. Emitter 3. Collector

Absolute Maximum Ratings T =25°C unless otherwise noted

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector current

CEO

CBO

EBO

5.0

- Continuous

500

°C

T , T

Junction and Storage Temperature

-55 ~ +150

stg

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max. Units

Off Characteristics

Collector-Emitter Breakdown Voltage

Collector Cutoff Current

= 10mA, I = 0

(BR)CEO

(BR)CES

CBO

= 10µA, I = 0

= 20V, I = 0

100

5.0

µA

= 20V, I = 0, TA = 150°C

Emitter Cutoff Current

= 5.0V, I = 0

µA

EBO

On Characteristics

DC Current Gain

= 100mA, V = 1.0V

100

600

= 300mA, V = 1.0V

= 500mA, V = 1.0V

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

= 500mA, I = 50mA

0.62

1.2

CE(sat)

= 500mA, V = 1.0V

BE(on)

Thermal Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Max.

Units

Total Device Dissipation

300

Alumina Substrate,** T = 25°C

Derate above 25°C

2.4

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

417

θJA

** Alumina = 0.4×0.3×0.024 in. 9.5% alumina

Rev. A1, August 2002

12 3

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BCX17 替代型号

型号	品牌	替代类型	描述	数据表
BCX17LT1G	ONSEMI	功能相似	General Purpose Transistors (Voltage and Current are Negative for PNP Transistors)
BC807-40LT3G	ONSEMI	功能相似	General Purpose Transistors(PNP Silicon)
BC807-40LT1G	ONSEMI	功能相似	General Purpose Transistors(PNP Silicon)

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