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BC807-40LT1G PDF预览

BC807-40LT1G

更新时间: 2024-02-25 23:08:19
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
4页 63K
描述
General Purpose Transistors(PNP Silicon)

BC807-40LT1G 数据手册

 浏览型号BC807-40LT1G的Datasheet PDF文件第2页浏览型号BC807-40LT1G的Datasheet PDF文件第3页浏览型号BC807-40LT1G的Datasheet PDF文件第4页 
BC807−16LT1,  
BC807−25LT1, BC807−40LT1  
General Purpose  
Transistors  
PNP Silicon  
http://onsemi.com  
Features  
COLLECTOR  
3
Pb−Free Packages are Available  
1
BASE  
MAXIMUM RATINGS  
Rating  
Collector - Emitter Voltage  
Collector - Base Voltage  
Emitter - Base Voltage  
Symbol  
Value  
−45  
Unit  
V
2
EMITTER  
V
CEO  
V
CBO  
V
EBO  
−50  
V
−5.0  
−500  
V
MARKING  
DIAGRAM  
Collector Current − Continuous  
I
C
mAdc  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
3
3
SOT−23  
CASE 318  
STYLE 6  
xxxD  
1
2
1
2
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
xxx  
D
= 5A (BC807−16LT1)  
5B1 (BC807−25LT1)  
5C (BC807−40LT1)  
= Date Code  
Total Device Dissipation FR5 Board,  
(Note 1) T = 25°C  
Derate above 25°C  
P
D
225  
1.8  
mW  
mW/°C  
A
Thermal Resistance, Junction−to−Ambient  
Total Device Dissipation Alumina Substrate,  
R
556  
°C/W  
q
JA  
P
D
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
(Note 2) T = 25°C  
300  
2.4  
mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance, Junction−to−Ambient  
Junction and Storage Temperature  
R
417  
°C/W  
°C  
q
JA  
T , T  
J
55 to  
+150  
stg  
1. FR−5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
June, 2004 − Rev. 5  
BC807−16LT1/D  
 

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