Datasheet > BC807-40QBH-Q

BC807-40QBH-Q

更新时间： 2024-11-26 11:11:19

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	310K
描述
45 V, 500 mA PNP general-purpose transistorsProduction

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BC807-40QBH-Q 数据手册

BC807QBH-Q series

45 V, 500 mA PNP general-purpose transistors

Rev. 1 — 25 January 2022

Product data sheet

1. General description

PNP general-purpose transistor in an ultra small DFN1110D-3 (SOT8015) leadless Surface-

Mounted Device (SMD) plastic package with side-wettable flanks.

Table 1. Product overview

Type number

Package

Name

NPN complement

JEDEC

Version

BC807-16QBH-Q

BC807-25QBH-Q

BC807-40QBH-Q

DFN1110D-3

MO340-BA

SOT8015

BC817-16QBH-Q

BC817-25QBH-Q

BC817-40QBH-Q

2. Features and benefits

•

High power dissipation capability

High current

Three current gain selections

Suitable for Automatic Optical Inspection (AOI) of solder joint

Smaller footprint compared to conventional leaded SMD packages

Low package height of 0.5 mm

High-temperature applications up to 175 °C

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

General-purpose switching and amplification

Space restricted applications

4. Quick reference data

Table 2. Quick reference data

Symbol

V_CEO

I_C

Parameter

Conditions

Min

Typ

Max

-45

-500

-1

Unit

collector-emitter voltage

collector current

peak collector current

DC current gain

open base; T_amb= 25 °C

T_amb= 25 °C

I_CM

single pulse; t_p≤ 1 ms; T_amb= 25 °C

h_FE

BC807-16QBH-Q

BC807-25QBH-Q

BC807-40QBH-Q

V_CE= -1 V; I_C= -100 mA T_amb= 25 °C [1]

100

160

250

400

600

[1] pulsed; t_p≤ 300 μs; δ ≤ 0.02

12 3 4 5 6 7...13

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