Datasheet > BC807-40W

BC807-40W

更新时间： 2024-11-26 02:58:55

品牌	Logo	应用领域
TSC		IOT 开关光电二极管晶体管
页数	文件大小	规格书
6页	150K
描述
200mW, PNP Small Signal Transistor

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中文翻译

获取价格

数据手册

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BC807-40W 数据手册

BC807-16W/-25W/-40W

Taiwan Semiconductor

Small Signal Product

200mW, PNP Small Signal Transistor

FEATURES

- Epitaxial planar die construction

- Surface mount device type

- Moisture sensitivity level 1

- Matte Tin(Sn) lead finish with Nickel(Ni) underplate

- Pb free and RoHS complian

- Green compound (Halogen free) with suffix "G" on

packing code and prefix "G" on date code

MECHANICAL DATA

- Case: SOT- 323 small outline plastic package

- Terminal: Matte tin plated, lead free,

solderable per MIL-STD-202, Method 208 guaranteed

- High temperature soldering guaranteed: 260°C/10s

- Weight: 0.005 grams (approximately)

SOT-323

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

PARAMETER

VALUE

SYMBOL

UNIT

Power Dissipation

P_D

V_CBO

V_CEO

V_EBO

I_C

200

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

0.5

Thermal Resistance, Junction to Ambient

R_θJA

625

K/W

°C

Junction and Storage Temperature Range

T_J, T_STG

-55 to + 150

Notes: 1. Transistor mounted on a FR4 printed-circuit board

PARAMETER

Collector-Base Breakdown Voltage

MIN

MAX

SYMBOL

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

UNIT

at -I_C= 10 µA

at -I_C= 10 mA

at -I_E= 10 µA

at V_CB= 20 V

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

100

µA

I_CBO

Collector Cut-off Current

at V_CB= 20 V , T_J= 150 ^oC

at V_EB= 5 V

I_EBO

V_CE(sat)

f_T

100

0.7

Emitter Cut-off Current

at -I_C= 500mA

Collector-Emitter Saturation Voltage

Transition Frequency

I_B= 50 mA

V_CE= 5 V I = 10 mA

f = 100MHz

MHz

at -V_CE= 1 V , -I_C= 100 mA

-16W

100

160

250

400

600

h_FE

DC Current Gain

-25W

-40W

at -V_CE= 1 V , -I_C= 500 mA

Version: B14

Document Number: DS_S1404006

12 3 4 5 6

中文翻译

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