Datasheet > BC807-40WT3G

BC807-40WT3G

更新时间： 2022-02-26 11:23:29

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	78K
描述
General Purpose Transistors

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BC807-40WT3G 数据手册

BC807-25W, BC807-40W

General Purpose

Transistors

PNP Silicon

http://onsemi.com

Features

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

COLLECTOR

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

BASE

Compliant

EMITTER

MAXIMUM RATINGS

Rating

Symbol

Value

−45

Unit

Collector − Emitter Voltage

Collector − Base Voltage

CEO

CBO

EBO

−50

Emitter − Base Voltage

−5.0

−500

Collector Current − Continuous

THERMAL CHARACTERISTICS

Characteristic

mAdc

SC−70

CASE 419

STYLE 3

Symbol

Max

Unit

Total Device Dissipation FR−5 Board,

(Note 1) T = 25°C

460

272

Thermal Resistance,

Junction−to−Ambient

°C/W

MARKING DIAGRAM

Junction and Storage Temperature

T , T

−55 to +150

°C

stg

5x M G

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−4 Board, 1 oz. Cu, 100 mm .

5x = Device Code

x = B or C

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Publication Order Number:

November, 2014 − Rev. 4

BC807−25W/D

12 3 4 5 6 7 8

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