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BCX17LT3 PDF预览

BCX17LT3

更新时间: 2024-11-25 03:21:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
4页 64K
描述
General Purpose Transistors (Voltage and Current are Negative for PNP Transistors)

BCX17LT3 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:CASE 318-08, TO-236, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.12Is Samacsys:N
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):240极性/信道类型:PNP
最大功率耗散 (Abs):0.225 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管元件材料:SILICONBase Number Matches:1

BCX17LT3 数据手册

 浏览型号BCX17LT3的Datasheet PDF文件第2页浏览型号BCX17LT3的Datasheet PDF文件第3页浏览型号BCX17LT3的Datasheet PDF文件第4页 
BCX17LT1, BCX18LT1, PNP  
BCX19LT1, NPN  
General Purpose  
Transistors  
(Voltage and Current are Negative  
for PNP Transistors)  
http://onsemi.com  
PNP  
Features  
COLLECTOR  
3
Pb−Free Package is Available  
1
BASE  
2
EMITTER  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
NPN  
Collector−Emitter Voltage  
BCX17LT1, BCX19LT1  
BCX18LT1  
V
CEO  
V
CBO  
V
EBO  
Vdc  
COLLECTOR 3  
45  
25  
1
Collector−Base Voltage  
BCX17LT1, BCX19LT1  
BCX18LT1  
Vdc  
BASE  
50  
30  
EmitterBase Voltage  
5.0  
Vdc  
2 EMITTER  
Collector Current − Continuous  
I
C
500  
mAdc  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
3
SOT−23  
CASE 318  
STYLE 6  
1
2
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
MARKING DIAGRAM  
Total Device Dissipation FR5 Board  
P
D
225  
mW  
(Note 1), T = 25°C  
A
Derate above 25°C  
1.8  
mW/°C  
°C/W  
Thermal Resistance,  
Junction−to−Ambient  
xxM  
R
556  
q
JA  
Total Device Dissipation Alumina  
P
D
Substrate, (Note 2) T = 25°C  
Derate above 25°C  
300  
2.4  
mW  
mW/°C  
A
xx = T1, T2, or U1  
M
= Date Code  
Thermal Resistance,  
Junction−to−Ambient  
R
417  
°C/W  
°C  
q
JA  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
Junction and Storage Temperature  
T , T  
J
55 to +150  
stg  
dimensions section on page 2 of this data sheet.  
1. FR5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
December, 2004 − Rev. 3  
BCX17LT1/D  
 

BCX17LT3 替代型号

型号 品牌 替代类型 描述 数据表
BCX17 ONSEMI

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PNP通用放大器
BCX17LT1G ONSEMI

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General Purpose Transistors (Voltage and Current are Negative for PNP Transistors)
BCX17LT1 ONSEMI

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