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BCX17RTA

更新时间: 2024-10-28 12:58:47
品牌 Logo 应用领域
捷特科 - ZETEX 晶体小信号双极晶体管光电二极管局域网
页数 文件大小 规格书
1页 40K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon,

BCX17RTA 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.04
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
参考标准:CECC50002-235表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.62 VBase Number Matches:1

BCX17RTA 数据手册

  
SOT23 PNP SILICON PLANAR  
MEDIUM POWER TRANSISTOR  
ISSUE 4 – MARCH 2001  
BCX17  
PARTMARKING DETAILS –  
BCX17  
BCX17R  
– T1  
– T4  
E
C
COMPLIMENTARY TYPES - BCX19  
B
SOT23  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCES  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
Collector-Emitter Voltage  
Collector-Emitter Voltage (IC =-10mA)  
Emitter-Base Voltage  
-50  
-45  
V
V
-5  
V
Collector Current  
-500  
mA  
mA  
mA  
mA  
mA  
mW  
°C  
Peak Collector Current  
ICM  
-1000  
-1000  
-100  
Peak Emitter Current  
IEM  
Base Current  
IB  
Peak Base Current  
IBM  
-200  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
Ptot  
330  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.  
Collector-Base Cut-Off  
Current  
ICBO -100 nA E =0, VCB =-20V  
I
-200  
-10  
IE =0, VCB =-20V, Tj=150°C  
µA  
µA  
Emitter-Base Cut-Off  
Current  
IEBO  
IC =0, VEB =-1V  
Base-Emitter Voltage  
VBE  
-1.2  
V
IC =-500mA, VCE =-1V*  
IC =-500mA, IB =-50mA*  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
-620 mV  
Static Forward Current  
Transfer Ratio  
hFE  
100  
70  
40  
600  
IC =-100mA, VCE =-1V  
I
I
C =-300mA, VCE =-1V*  
C =-500mA, VCE =-1V*  
Transition Frequency  
Output Capacitance  
fT  
100  
8.0  
MHz IC =-10mA, VCE =-5V  
f =35MHz  
Cobo  
pF  
VCB =-10V, f =1MHz  
*Measured under pulsed conditions.  
Spice parameter data is available upon request for this device  
TBA  

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