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BCX17D87Z PDF预览

BCX17D87Z

更新时间: 2024-11-25 15:32:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 光电二极管晶体管
页数 文件大小 规格书
3页 44K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon

BCX17D87Z 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.36
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

BCX17D87Z 数据手册

 浏览型号BCX17D87Z的Datasheet PDF文件第2页浏览型号BCX17D87Z的Datasheet PDF文件第3页 
BCX17  
PNP General Purpose Amplifier  
3
This device is esigned for general purpose amplifier and switching  
application at current 0.5A.  
Sourced from process 78.  
2
SOT-23  
1
Mark: T1  
1. Base 2. Emitter 3. Collector  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
45  
Units  
V
V
V
V
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector current  
CEO  
50  
V
CBO  
EBO  
5.0  
V
I
- Continuous  
500  
mA  
°C  
C
T , T  
Junction and Storage Temperature  
-55 ~ +150  
J
stg  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max. Units  
OFF CHARACTERISTICS  
V
V
Collector-Emitter Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Collector Cutoff Current  
I
I
= 10mA, I = 0  
45  
50  
V
V
(BR)CEO  
(BR)CES  
CBO  
C
C
B
= 10µA, I = 0  
C
I
V
V
= 20V, I = 0  
100  
5.0  
nA  
µA  
CB  
CB  
E
= 20V, I = 0, T = 150°C  
E
A
I
Emitter Cutoff Current  
V
= 5.0V, I = 0  
10  
µA  
EBO  
EB  
C
ON CHARACTERISTICS  
h
DC Current Gain  
I
I
I
= 100mA, V = 1.0V  
100  
70  
40  
600  
FE  
C
C
C
CE  
= 300mA, V = 1.0V  
CE  
= 500mA, V = 1.0V  
CE  
V
V
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I
I
= 500mA, I = 50mA  
0.62  
1.2  
V
V
CE(sat)  
C
B
= 500mA, V = 1.0V  
BE(on)  
C
CE  
Thermal Characteristics T =25°C unless otherwise noted  
A
Symbol  
Parameter  
Max.  
Units  
mW  
P
Total Device Dissipation  
300  
D
Alumina Substrate,** T = 25°C  
A
Derate above 25°C  
2.4  
mW/°C  
°C/W  
R
Thermal Resistance, Junction to Ambient  
417  
θJA  
** Alumina = 0.4×0.3×0.024 in. 9.5% alumina  
©2002 Fairchild Semiconductor Corporation  
Rev. A, February 2002  

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