生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.58 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 32 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 80 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 800 ns | 最大开启时间(吨): | 150 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCW61B-T | RECTRON |
获取价格 |
Transistor |
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BCW61BT/R | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 100MA I(C) | TO-236AA |
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BCW61BT116 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon |
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BCW61BT117 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon |
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BCW61BT216 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL |
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BCW61BTA | DIODES |
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Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon |
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BCW61BTC | DIODES |
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Small Signal Bipolar Transistor, 0.2A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon |
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BCW61BTF | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, |
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BCW61BTI | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, |
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BCW61BTR | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 32V V(BR)CEO, 1-Element, PNP, Silicon, |
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