Datasheet > BCR10PN-H6327

BCR10PN-H6327

更新时间： 2024-11-24 12:28:15

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体数字晶体管
页数	文件大小	规格书
7页	533K
描述
NPN/PNP Silicon Digital Transistor Array

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中文翻译

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数据手册

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BCR10PN-H6327 数据手册

BCR10PN

NPN/PNP Silicon Digital Transistor Array

• Switching circuit, inverter, interface circuit,

driver circuit

• Two (galvanic) internal isolated NPN/PNP

Transistors in one package

• Built in bias resistor NPN and PNP

(R =10 kΩ, R =10 kΩ)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

R₂

R₁

TR2

TR1

R₁

R₂

EHA07176

Tape loading orientation

Marking on SOT-363 package

(for example W1s)

corresponds to pin 1 of device

Top View

6 5 4

W1s

Position in tape: pin 1

opposite of feed hole side

1 2 3

Direction of Unreeling

EHA07193

Type

BCR10PN

Marking

W1s

Pin Configuration

1=E1 2=B1 3=C2 4=E2 5=B2 6=C1

Package

SOT363

Maximum Ratings for NPN and PNP Types

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-base voltage

Input forward voltage

CEO

CBO

i(fwd)

i(rev)

Input reverse voltage

100

250

150

°C

DC collector current

Total power dissipation, T = 115 °C

Junction temperature

Storage temperature

tot

-65 ... 150

stg

Thermal Resistance

Junction - soldering point

≤ 140

K/W

thJS

For calculation of R

please refer to Application Note AN077 (Thermal Resistance Calculation)

thJA

2011-09-22

12 3 4 5 6 7

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