Datasheet > BCR101L3E6327

BCR101L3E6327

更新时间： 2024-01-18 11:54:29

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	557K
描述
Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, NPN, Silicon

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BCR101L3E6327 数据手册

BCR101...

DC current gain h = ƒ(I )

Collector-emitter saturation voltage

= 5 V (common emitter configuration)

= ƒ(I ), h = 20

CEsat C FE

10 ³

10 ^-1

10 ^-2

10 ^-3

10 ^-4

10 ²

10 ¹

10 ^-4

10 ^-3

10 ^-2

10 ^-1

0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4

0.5

CEsat

Input on Voltage Vi

= ƒ(I )

Input off voltage V

= ƒ(I )

i(off) C

(on)

= 0.3V (common emitter configuration)

= 5V (common emitter configuration)

10 ^-1

10 ^-2

10 ^-3

10 ^-4

10 ^-5

10 ^-3

10 ^-4

10 ^-5

10 ^-6

10 ^-1

10 ⁰

10 ¹

10 ²

0.5

1.5

2.5

i(off)

i(on)

Nov-27-2003

1 234 5 6 7...10

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