Datasheet > BCP68T3

BCP68T3

更新时间： 2024-11-08 23:34:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	75K
描述
TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 1A I(C) \| SOT-223

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BCP68T3 数据手册

ON Semiconductort

BCP68T1

NPN Silicon

Epitaxial Transistor

ON Semiconductor Preferred Device

MEDIUM POWER

NPN SILICON

HIGH CURRENT

TRANSISTOR

This NPN Silicon Epitaxial Transistor is designed for use in low

voltage, high current applications. The device is housed in the

SOT-223 package, which is designed for medium power surface

mount applications.

SURFACE MOUNT

• High Current: I = 1.0 Amp

• The SOT-223 Package can be soldered using wave or reflow.

• SOT-223 package ensures level mounting, resulting in improved

thermal conduction, and allows visual inspection of soldered joints.

The formed leads absorb thermal stress during soldering, eliminating

the possibility of damage to the die

• Available in 12 mm Tape and Reel

CASE 318E-04, STYLE 1

TO-261AA

Use BCP68T1 to order the 7 inch/1000 unit reel.

Use BCP68T3 to order the 13 inch/4000 unit reel.

• The PNP Complement is BCP69T1

COLLECTOR 2,4

BASE

EMITTER 3

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Symbol

Value

Unit

Vdc

Adc

CEO

CBO

EBO

Emitter-Base Voltage

Collector Current

(1)

Total Power Dissipation @ T = 25°C

Derate above 25°C

1.5

Watts

mW/°C

Operating and Storage Temperature Range

DEVICE MARKING

T , T

–65 to 150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance — Junction-to-Ambient (surface mounted)

83.3

°C/W

θJA

Maximum Temperature for Soldering Purposes

Time in Solder Bath

260

°C

Sec

1. Device mounted on a FR-4 glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.0625 in.; mounting pad for the collector lead = 0.93 sq. in.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

November, 2001 – Rev. 3

BCP68T1/D

12 3 4 5 6 7 8

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BCP68TRL	YAGEO	获取价格	Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4
BCP68TRL13	NXP	获取价格	TRANSISTOR 1 A, 20 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
BCP68TRL13	YAGEO	获取价格	Power Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4