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BCP68T3G PDF预览

BCP68T3G

更新时间： 2024-11-09 14:41:03
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
4页 87K
描述
1A, 20V, NPN, Si, POWER TRANSISTOR, TO-261AA, HALOGEN FREE AND ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN

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BCP68T3G 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：TO-261AA包装说明：SOT-223, 4 PIN
针数：4Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.02
外壳连接：COLLECTOR最大集电极电流 (IC)：1 A
集电极-发射极最大电压：20 V配置：SINGLE
最小直流电流增益 (hFE)：60JEDEC-95代码：TO-261
JESD-30 代码：R-PDSO-G4JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：4最高工作温度：150 °C
最低工作温度：-65 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
最大功率耗散 (Abs)：1.5 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：60 MHzVCEsat-Max：0.5 V
Base Number Matches：1

BCP68T3G 数据手册

 浏览型号BCP68T3G的Datasheet PDF文件第2页浏览型号BCP68T3G的Datasheet PDF文件第3页浏览型号BCP68T3G的Datasheet PDF文件第4页 
BCP68T1G  
NPN Silicon  
Epitaxial Transistor  
This NPN Silicon Epitaxial Transistor is designed for use in low  
voltage, high current applications. The device is housed in the  
SOT−223 package, which is designed for medium power surface  
mount applications.  
http://onsemi.com  
Features  
MEDIUM POWER NPN SILICON  
HIGH CURRENT TRANSISTOR  
SURFACE MOUNT  
• High Current  
• The SOT−223 Package Can Be Soldered Using Wave or Reflow  
• SOT−223 package ensures level mounting, resulting in improved  
thermal conduction, and allows visual inspection of soldered joints.  
The formed leads absorb thermal stress during soldering, eliminating  
the possibility of damage to the die  
COLLECTOR 2,4  
BASE  
1
• The PNP Complement is BCP69T1  
• S Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable*  
EMITTER 3  
4
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
1
2
3
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
SOT−223  
CASE 318E  
STYLE 1  
C
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Collector Current  
Symbol  
Value  
20  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
V
CBO  
V
EBO  
MARKING DIAGRAM  
25  
5.0  
1.0  
AYW  
CA G  
G
I
C
Total Power Dissipation  
P
D
@ T = 25°C (Note 1)  
1.5  
12  
W
mW/°C  
A
Derate above 25°C  
CA = Specific Device Code  
Operating and Storage Temperature  
Range  
T , T  
−65 to 150  
°C  
J
stg  
A
Y
W
G
= Assembly Location  
= Year  
= Work Week  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
= Pb−Free Package  
(Note: Microdot may be in either location)  
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.  
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.  
ORDERING INFORMATION  
THERMAL CHARACTERISTICS  
†
Device  
Package  
Shipping  
Characteristic  
Symbol  
Max  
Unit  
BCP68T1G  
SOT−223  
(Pb−Free)  
1,000/Tape & Reel  
1,000/Tape & Reel  
4,000/Tape & Reel  
Thermal Resistance, Junction−to−Ambient  
(Surface Mounted)  
R
83.3  
°C/W  
q
JA  
SBCP68T1G*  
BCP68T3G  
SOT−223  
(Pb−Free)  
Lead Temperature for Soldering,  
0.0625 in from case  
Time in Solder Bath  
T
260  
10  
°C  
L
Sec  
SOT−223  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
September, 2013 − Rev. 8  
BCP68T1/D  
1234

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