Datasheet > BCP55

BCP55

更新时间： 2024-10-15 18:09:55

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	565K
描述
SOT-223

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BCP55 数据手册

BCP55

BIPOLAR TRANSISTOR (NPN)

FEATURES

 Complementary to BCP52

 High collector current

 Low collector-emitter saturation voltage

 For AF driver and output stages

 Surface Mount device

SOT-223

MECHANICAL DATA



Case: SOT-223

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.04 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

1.5

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

83.3

150

°C/W

°C

Storage Temperature

TSTG

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

V(BR)CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=100uA，I_E=0

I_C=10mA，I_B=0

I_E=10uA，I_C=0

V(BR)CEO

V(BR)EBO

I_CBO

0.1

V_CB=30V, I_E=0

Emitter cut-off current

V_EB=5V, I_C=0

I_EBO

V_CE=2V, I_C=5mA

V_CE=2V, I_C=150mA

V_CE=2V, I_C=500mA

I_C=500mA，I_B=50mA

V_CE=2V,I_C=500mA

DC current gain

h_FE

250

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

0.5

V_CE=10V,I_C=50mA,f=100

Transition frequency

f_T

100

MHz

CLASSIFICATION OF h_FE

Rank

BCP55-10

63-160

BCP55-16

100-250

Range

Marking

BCP55-10

BCP55-16

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