型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCP55-10 | NXP |
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NPN medium power transistors | |
BCP55-10 | INFINEON |
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NPN Silicon AF Transistors (For AF driver and output stages High collector current) | |
BCP55-10 | TYSEMI |
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High collector current 1.3 W power dissipation. emitter-base voltage VEBO 5 V | |
BCP55-10 | NEXPERIA |
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60 V, 1 A NPN medium power transistorsProduction | |
BCP55-10,115 | NXP |
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60 V, 1 A NPN medium power transistor SC-73 4-Pin | |
BCP55-10E6327 | INFINEON |
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Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin | |
BCP55-10E6433 | INFINEON |
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Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin | |
BCP55-10-Q | NEXPERIA |
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60 V, 1 A NPN medium power transistorsProduction | |
BCP55-10T | NEXPERIA |
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60 V, 1 A NPN medium power transistorsProduction | |
BCP55-10T/R | NXP |
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TRANSISTOR 1 A, 60 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power |