Datasheet > BCP55-16-C

BCP55-16-C

更新时间： 2022-02-26 12:45:31

品牌	Logo	应用领域
SECOS		/
页数	文件大小	规格书
2页	329K
描述
NPN Silicon Medium Power Transistor

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BCP55-16-C 数据手册

BCP55-C

1A, 60V

NPN Silicon Medium Power Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES

SOT-223

ꢀ

For AF Driver and Output Stages

High Collector Current

Low Collector-Emitter Saturation Voltage

Top View

C B

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-223

2.5K

13 inch

ORDER INFORMATION

Millimeter

Min. Max.

Millimeter

REF.

Min.

Max.

Part Number

Type

5.90

6.70

3.30

1.40

4.45

0.60

6.70

7.30

3.80

1.90

4.75

0.85

0.18

2.00 REF.

BCP55-16-C

Lead (Pb)-free and Halogen-free

0.20

0.40

1.10 REF.

2.30 REF.

2.80 3.20

ABSOLUTE MAXIMUM RATINGS ^(T_A^{=25°C unless otherwise specified)}

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Power Dissipation

Typical Thermal Resistance

Storage Temperature

P_D

1.5

R_θJA

T_STG

83.3

-65~150

°C/W

°C

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Min.

Max.

Unit

Test Conditions

I_C=0.1mA, I_E=0

I_C=10mA, I_B=0

100

I_E=10µA, I_C=0

V_CB=30V, I_E=0

100

V_CE=2V, I_C=5mA

DC Current Gain

h_FE

250

V_CE=2V, I_C=150mA

V_CE=2V, I_C=500mA

I_C=500mA, I_B=50mA

V_CE=2V, I_C=500mA

V_CE=10V, I_C=50mA, f=100MHz

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

V_CE(sat)

V_BE(on)

f_T

0.5

Transition Frequency

100

MHz

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

17-Oct-2017 Rev. B

Page 1 of 2

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