生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.58 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 25 |
JESD-30 代码: | R-PDSO-G4 | 元件数量: | 1 |
端子数量: | 4 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 130 MHz | VCEsat-Max: | 0.5 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCP55-10-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 1 A, 60 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power | |
BCP55-10TRL | NXP |
获取价格 |
TRANSISTOR 1 A, 60 V, NPN, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP General Purpos | |
BCP55-10TRL13 | NXP |
获取价格 |
TRANSISTOR 1 A, 60 V, NPN, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP General Purpos | |
BCP5516 | DIODES |
获取价格 |
NPN, 60V, 1A, SOT223 | |
BCP55-16 | INFINEON |
获取价格 |
NPN Silicon AF Transistors (For AF driver and output stages High collector current) | |
BCP55-16 | NXP |
获取价格 |
NPN medium power transistors | |
BCP55-16 | NEXPERIA |
获取价格 |
60 V, 1 A NPN medium power transistorsProduction | |
BCP55-16 | MCC |
获取价格 |
Tape&Reel:2.5Kpcs/Reel; | |
BCP55-16 | YANGJIE |
获取价格 |
SOT-223 | |
BCP55-16 | BL Galaxy Electrical |
获取价格 |
60V,1A,General Purpose NPN Bipolar Transistor |