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BCP55-16T PDF预览

BCP55-16T

更新时间: 2024-11-22 11:13:19
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
14页 268K
描述
60 V, 1 A NPN medium power transistorsProduction

BCP55-16T 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.81
JESD-609代码:e3湿度敏感等级:1
端子面层:Tin (Sn)

BCP55-16T 数据手册

 浏览型号BCP55-16T的Datasheet PDF文件第2页浏览型号BCP55-16T的Datasheet PDF文件第3页浏览型号BCP55-16T的Datasheet PDF文件第4页浏览型号BCP55-16T的Datasheet PDF文件第5页浏览型号BCP55-16T的Datasheet PDF文件第6页浏览型号BCP55-16T的Datasheet PDF文件第7页 
BCP55T series  
60 V, 1 A NPN medium power transistors  
Rev. 1 — 29 April 2019  
Product data sheet  
1. Product profile  
1.1. General description  
NPN medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device  
(SMD) plastic package.  
Table 1. Product overview  
Type number  
Package  
Nexperia  
SOT223  
NPN comlement  
JEDEC  
BCP55T  
SC-73  
BCP52T  
BCP55-10T  
BCP55-16T  
BCP52-10T  
BCP52-16T  
1.2. Features and benefits  
High collector current capability IC and ICM  
Three current gain selections  
High power dissipation capability  
AEC-Q101 qualified  
1.3. Applications  
Linear voltage regulators  
MOSFET drivers  
High-side switches  
Power management  
Amplifiers  
1.4. Quick reference data  
Table 2. Quick reference data  
Tamb = 25 °C unless otherwise specified.  
Symbol  
VCEO  
IC  
Parameter  
Conditions  
Min  
Typ  
Max  
60  
1
Unit  
V
collector-emitter voltage  
collector current  
open base  
-
-
-
-
-
-
A
ICM  
peak collector current  
single pulse; tp ≤ 1 ms  
2
A
 
 
 
 
 

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