生命周期: | Active | 零件包装代码: | SC-73 |
包装说明: | PLASTIC, SC-73, 4 PIN | 针数: | 4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.27 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 60 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 40 |
JESD-30 代码: | R-PDSO-G4 | 元件数量: | 1 |
端子数量: | 4 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 130 MHz | VCEsat-Max: | 0.5 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BCP56 | STMICROELECTRONICS |
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MEDIUM POWER AMPLIFIER | |
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Surface mount Si-Epitaxial PlanarTransistors | |
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NPN Silicon Medium Power Transistor | |
BCP56 | DIODES |
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NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223 | |
BCP56 | TYSEMI |
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High collector current 1.3 W power dissipation. emitter-base voltage VEBO 5 V | |
BCP56 | WINNERJOIN |
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TRANSISTOR (NPN) | |
BCP56 | NEXPERIA |
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80 V, 1 A NPN medium power transistorsProduction | |
BCP56 | ONSEMI |
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NPN Bipolar Transistor | |
BCP56 | KEXIN |
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NPN Medium Power Transistor |