Datasheet > BCP55

BCP55

更新时间： 2024-11-28 14:55:11

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
3页	759K
描述
双极型晶体管

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中文翻译

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技术参数
数据手册

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BCP55 技术参数

极性：	NPN	Collector-emitter breakdown voltage：	60
Collector Current - Continuous：	1	DC current gain - Min：	63
DC current gain - Max：	250	Transition frequency：	100
Package：	SOT-223	Storage Temperature Range：	-65-150
class：	Transistors

BCP55 数据手册

BCP54,55,56

SOT-223 Transistor(NPN)

SOT-223

1. BASE

2. COLLECTOR

3. EMITTER

Features

For AF driver and output stages

High collector current

Low collector-emitter saturation voltage

Complementary types: BCP51 ... BCP53 (PNP)

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Dimensions in inches and (millimeters)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

BCP54

BCP55

BCP56

100

Units

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

P_C

Collector Power Dissipation

1.5

℃/W

℃

R_θJA

T_stg

Thermal Resistance Junction to Ambient

Storage Temperature Range

-65to+150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

BCP54

BCP55

BCP56

V_(BR)CBO

I_C= 0.1mA,I_E=0

100

Collector-emitter breakdown voltage

BCP54

BCP55

BCP56

V_(BR)CEO

I_C= 10mA,I_B=0

Base-emitter breakdown voltage

Collector cut-off current

V_(BR)EBO

I_CBO

I_C= 10μA,I_E=0

V_CB= 30 V, I_E=0

100

250

h_FE(1)

h_FE(2)

h_FE(3)

V_CE(sat)

V_BE

V_CE= 2V, I_C=5mA

V_CE= 2V, I_C=150m A

V_CE= 2V, I_C=500m A

I_C=500mA,I_B=50mA

V_CE=2V, I_C=500m A

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

0.5

Transition frequency

f_T

V_CE=10V,I_C=50mA,f=100MHz

100

MHz

CLASSIFICATION OF h_FE(2)

BCP54-10, BCP55-10, BCP56-10

63-160

BCP54-16, BCP55-16, BCP56-16

100-250

Rank

Range

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

12 3

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