BCP53T1G

更新时间： 2024-11-24 12:52:23

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管功率双极晶体管光电二极管放大器
页数	文件大小	规格书
5页	141K
描述
PNP Silicon Epitaxial Transistors

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技术参数
数据手册
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BCP53T1G 技术参数

是否无铅：	不含铅	生命周期：	Active
零件包装代码：	TO-261AA	包装说明：	TO-261, 4 PIN
针数：	4	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.75
Factory Lead Time：	8 weeks	风险等级：	0.54
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	1.5 A
集电极-发射极最大电压：	80 V	配置：	SINGLE
最小直流电流增益 (hFE)：	40	JEDEC-95代码：	TO-261AA
JESD-30 代码：	R-PDSO-G4	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	4	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性/信道类型：	PNP	最大功率耗散 (Abs)：	1.5 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Tin (Sn)
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	40	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	50 MHz
Base Number Matches：	1

BCP53T1G 数据手册

BCP53 Series,

SBCP53 Series

PNP Silicon

Epitaxial Transistors

This PNP Silicon Epitaxial transistor is designed for use in audio

amplifier applications. The device is housed in the SOT−223 package

which is designed for medium power surface mount applications.

http://onsemi.com

MEDIUM POWER HIGH

CURRENT SURFACE MOUNT

PNP TRANSISTORS

• High Current: 1.5 A

• NPN Complement is BCP56

• The SOT−223 Package can be soldered using wave or reflow. The

formed leads absorb thermal stress during soldering, eliminating the

possibility of damage to the die

COLLECTOR 2,4

• Device Marking:

BCP53T1 = AH

BASE

BCP53−10T1 = AH−10

BCP53−16T1 = AH−16

• AEC−Q101 Qualified and PPAP Capable

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

EMITTER 3

MARKING DIAGRAM

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

AYW

XXXXXG

SOT−223

CASE 318E

STYLE 1

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current

Symbol

Value

−80

Unit

Vdc

Adc

= Assembly Location

= Year

= Work Week

CEO

CBO

EBO

−100

−5.0

1.5

XXXXX = Specific Device Code

= Pb−Free Package

(*Note: Microdot may be in either location)

ORDERING INFORMATION

Total Power Dissipation

†

@ T = 25°C (Note 1.)

Derate above 25°C

1.5

mW/°C

Device

Package

Shipping

BCP53T1G

SOT−223

(Pb−Free)

1000 / Tape &

Reel

Operating and Storage

Temperature Range

T , T

−65 to

+150

°C

stg

SBCP53−10T1G SOT−223

(Pb−Free)

1000 / Tape &

Reel

THERMAL CHARACTERISTICS

Characteristic

BCP53−10T1G

SOT−223

(Pb−Free)

1000 / Tape &

Reel

Symbol

Max

Unit

Thermal Resistance,

Junction to Ambient

(surface mounted)

83.3

°C/W

SBCP53−10T1G SOT−223

(Pb−Free)

1000 / Tape &

Reel

BCP53−16T1G

SOT−223

(Pb−Free)

1000 / Tape &

Reel

Lead Temperature for Soldering,

0.0625″ from case

260

°C

Time in Solder Bath

SBCP53−16T1G SOT−223

(Pb−Free)

1000 / Tape &

Reel

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

BCP53−16T3G

SOT−223

(Pb−Free)

4000 / Tape &

Reel

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.

x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

November, 2011 − Rev. 8

BCP53T1/D

12 3 4 5

中文翻译

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BCP53T1G 替代型号

型号	品牌	替代类型	描述	数据表
BCP53-10T1G	ONSEMI	类似代替	PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT
BF720T1G	ONSEMI	功能相似	NPN Silicon Transistor
BCP53	FAIRCHILD	功能相似	PNP General Purpose Amplifier

与BCP53T1G相关器件

型号	品牌	获取价格	描述	数据表
BCP53T3	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 1A I(C) \| SOT-223
BCP53TA	DIODES	获取价格	PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223
BCP53-TAPE-13	NXP	获取价格	TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
BCP53-TAPE-7	NXP	获取价格	TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
BCP53TC	DIODES	获取价格	Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4
BCP53TF	ETC	获取价格	BCP53T/SOT223/SC-73
BCP53T-Q	NEXPERIA	获取价格	80 V, 1 A PNP medium power transistorsProduction
BCP53TRL	NXP	获取价格	TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
BCP53TRL	YAGEO	获取价格	Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4
BCP53TRL13	NXP	获取价格	TRANSISTOR 1 A, 80 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power

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