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BCP54

更新时间: 2024-01-09 08:46:20
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器晶体管开关光电二极管
页数 文件大小 规格书
4页 41K
描述
NPN General Purpose Amplifier

BCP54 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.04外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
标称过渡频率 (fT):130 MHzVCEsat-Max:0.5 V
Base Number Matches:1

BCP54 数据手册

 浏览型号BCP54的Datasheet PDF文件第2页浏览型号BCP54的Datasheet PDF文件第3页浏览型号BCP54的Datasheet PDF文件第4页 
Discr ete P OWER & Sign a l  
Tech n ologies  
BCP54  
C
E
C
B
SOT-223  
NPN General Purpose Amplifier  
This device is designed for general purpose medium power  
amplifiers and switching circuits requiring collector currents  
to 1.2 A. Sourced from Process 38.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
45  
45  
V
V
V
A
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
1.5  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
BCP54  
PD  
Total Device Dissipation  
Derate above 25 C  
1.5  
12  
W
mW/ C  
°
°
Thermal Resistance, Junction to Ambient  
83.3  
Rθ  
C/W  
°
JA  
ã 1997 Fairchild Semiconductor Corporation  

BCP54 替代型号

型号 品牌 替代类型 描述 数据表
BCP54-16,115 NXP

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