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BCP54/T3 PDF预览

BCP54/T3

更新时间: 2024-02-06 17:20:26
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
22页 1113K
描述
TRANSISTOR 1 A, 45 V, NPN, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP General Purpose Power

BCP54/T3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.02峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BCP54/T3 数据手册

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BCP54; BCX54; BC54PA  
45 V, 1 A NPN medium power transistors  
Rev. 8 — 21 October 2011  
Product data sheet  
1. Product profile  
1.1 General description  
NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.  
Table 1. Product overview  
Type number[1]  
Package  
NXP  
PNP complement  
JEITA  
SC-73  
SC-62  
-
JEDEC  
BCP54  
BCX54  
BC54PA  
SOT223  
SOT89  
SOT1061  
-
BCP51  
BCX51  
BC51PA  
TO-243  
-
[1] Valid for all available selection groups.  
1.2 Features and benefits  
High current  
Three current gain selections  
High power dissipation capability  
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)  
Leadless very small SMD plastic package with medium power capability (SOT1061)  
AEC-Q101 qualified  
1.3 Applications  
Linear voltage regulators  
Power management  
MOSFET drivers  
Amplifiers  
Low-side switches  
Battery-driven devices  
1.4 Quick reference data  
Table 2.  
Quick reference data  
Symbol Parameter  
Conditions  
Min  
-
Typ  
Max  
45  
Unit  
V
VCEO  
IC  
collector-emitter voltage open base  
collector current  
-
-
-
-
-
-
-
1
A
ICM  
hFE  
peak collector current  
DC current gain  
single pulse; tp 1 ms  
-
2
A
[1]  
[1]  
[1]  
VCE = 2 V; IC = 150 mA  
VCE = 2 V; IC = 150 mA  
VCE = 2 V; IC = 150 mA  
63  
63  
100  
250  
160  
250  
hFE selection -10  
hFE selection -16  
[1] Pulse test: tp 300 s; = 0.02.  

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