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BCP54-16 PDF预览

BCP54-16

更新时间: 2024-11-24 03:21:31
品牌 Logo 应用领域
德欧泰克 - DIOTEC 晶体晶体管功率双极晶体管光电二极管
页数 文件大小 规格书
2页 108K
描述
45 V, 1 A NPN medium power transistors

BCP54-16 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.57湿度敏感等级:1
Base Number Matches:1

BCP54-16 数据手册

 浏览型号BCP54-16的Datasheet PDF文件第2页 
BCP54 ... BCP56  
BCP54 ... BCP56  
Surface Mount General Purpose Si-Epi-Planar Transistors  
Si-Epi-Planar Universaltransistoren für die Oberflächenmontage  
NPN  
NPN  
Version 2006-06-26  
Power dissipation  
Verlustleistung  
1.3 W  
6.5±0.2  
3±0.1  
1.65  
Plastic case  
Kunststoffgehäuse  
SOT-223  
0.04 g  
4
Type  
Code  
Weight approx.  
Gewicht ca.  
3
1
2
0.7  
2.3  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
3.25  
Standard packaging taped and reeled  
Standard Lieferform gegurtet auf Rolle  
Dimensions - Maße [mm]  
1 = B 2/4 = C 3 = E  
Maximum ratings (TA = 25°C)  
Grenzwerte (TA = 25°C)  
BCP54  
45 V  
BCP55  
60 V  
BCP56  
80 V  
Collector-Emitter-volt. – Kollektor-Emitter-Spannung  
Collector-Base-voltage – Kollektor-Basis-Spannung  
Emitter-Base-voltage – Emitter-Basis-Spannung  
Power dissipation – Verlustleistung  
B open  
E open  
C open  
VCEO  
VCBO  
VEBO  
Ptot  
IC  
45 V  
60 V  
100 V  
5 V  
1.3 W 1)  
Collector current – Kollektorstrom (dc)  
1 A  
Peak Collector current – Kollektor-Spitzenstrom  
Peak Base current – Basis-Spitzenstrom  
ICM  
1.5 A  
200 mA  
IBM  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-55...+150°C  
-55…+150°C  
Characteristics (Tj = 25°C)  
Kennwerte (Tj = 25°C)  
Min.  
Typ.  
Max.  
DC current gain – Kollektor-Basis-Stromverhältnis 2)  
VCE = 2 V, IC = 5 mA  
all groups  
hFE  
25  
VCE = 2 V, IC = 150 mA  
Group -6  
Group -10  
Group -16  
hFE  
hFE  
hFE  
40  
63  
100  
100  
160  
250  
VCE = 2 V, IC = 500 mA  
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2)  
all groups  
hFE  
25  
IC = 500 mA, IB = 50 mA  
Base-Emitter voltage – Basis-Emitter-Spannung 2)  
VCEsat  
0.5 V  
1 V  
IC = 500 mA, IB = 50 mA  
VBE  
1
Mounted on P.C. board with 3 mm2 copper pad at each terminal  
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss  
2
Tested with pulses tp = 300 µs, duty cycle 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis 2%  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1

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