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BCP54-10-Q PDF预览

BCP54-10-Q

更新时间: 2024-11-28 11:11:59
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
12页 233K
描述
45 V, 1 A NPN medium power transistorsProduction

BCP54-10-Q 数据手册

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BCP54-Q series  
45 V, 1 A NPN medium power transistors  
Rev. 1 — 2 May 2022  
Product data sheet  
1. General description  
NPN medium power transistors in a SOT223 (SC-73) flat lead Surface-Mounted Device (SMD)  
plastic package.  
2. Features and benefits  
High collector current capability IC and ICM  
Three current gain selections  
High power dissipation capability  
Qualified according to AEC-Q101 and recommended for use in automotive applications  
3. Applications  
Linear voltage regulators  
MOSFET drivers  
Low-side switches  
Battery-driven devices  
Power management  
Amplifiers  
4. Quick reference data  
Table 1. Quick reference data  
Tamb = 25 °C unless otherwise specified.  
Symbol  
VCEO  
IC  
Parameter  
Conditions  
Min  
Typ  
Max  
45  
1
Unit  
V
collector-emitter voltage  
collector current  
peak collector current  
DC current gain  
BCP54-Q  
open base  
-
-
-
-
-
-
A
ICM  
single pulse; tp ≤ 1 ms  
VCE = 2 V; IC = 150 mA  
2
A
hFE  
[1]  
[1]  
[1]  
63  
-
-
-
250  
160  
250  
BCP54-10-Q  
63  
BCP54-16-Q  
100  
[1] pulsed; tp ≤ 300 μs; δ ≤ 0.02  
 
 
 
 
 

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