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BCP54

更新时间: 2023-09-03 20:30:09
品牌 Logo 应用领域
安世 - NEXPERIA 开关光电二极管晶体管
页数 文件大小 规格书
12页 244K
描述
45 V, 1 A NPN medium power transistorsProduction

BCP54 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.04外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管元件材料:SILICON
标称过渡频率 (fT):130 MHzVCEsat-Max:0.5 V
Base Number Matches:1

BCP54 数据手册

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BCP54 series  
45 V, 1 A NPN medium power transistors  
Rev. 9 — 6 January 2023  
Product data sheet  
1. General description  
NPN medium power transistors in a SOT223 (SC-73) flat lead Surface-Mounted Device (SMD)  
plastic package.  
2. Features and benefits  
High collector current capability IC and ICM  
Three current gain selections  
High power dissipation capability  
AEC-Q101 qualified  
3. Applications  
Linear voltage regulators  
MOSFET drivers  
Low-side switches  
Battery-driven devices  
Power management  
Amplifiers  
4. Quick reference data  
Table 1. Quick reference data  
Tamb = 25 °C unless otherwise specified.  
Symbol  
VCEO  
IC  
Parameter  
Conditions  
Min  
Typ  
Max  
45  
1
Unit  
V
collector-emitter voltage  
collector current  
peak collector current  
DC current gain  
BCP54  
open base  
-
-
-
-
-
-
A
ICM  
single pulse; tp ≤ 1 ms  
VCE = 2 V; IC = 150 mA  
2
A
hFE  
[1]  
[1]  
[1]  
63  
-
-
-
250  
160  
250  
BCP54-10  
63  
BCP54-16  
100  
[1] pulsed; tp ≤ 300 μs; δ ≤ 0.02  
 
 
 
 
 

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