BCP53-10T1G

更新时间： 2024-11-24 12:31:59

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
5页	100K
描述
PNP Silicon Epitaxial Transistors MEDIUM POWER HIGH CURRENT SURFACE MOUNT

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中文翻译

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BCP53-10T1G 数据手册

BCP53 Series

PNP Silicon

Epitaxial Transistors

This PNP Silicon Epitaxial transistor is designed for use in audio

amplifier applications. The device is housed in the SOT−223 package

which is designed for medium power surface mount applications.

http://onsemi.com

• High Current

• NPN Complement is BCP56

• The SOT−223 Package can be soldered using wave or reflow.

The formed leads absorb thermal stress during soldering,

eliminating the possibility of damage to the die

MEDIUM POWER HIGH

CURRENT SURFACE MOUNT

PNP TRANSISTORS

• Device Marking:

COLLECTOR 2, 4

BCP53T1 = AH

BCP53−10T1 = AH−10

BCP53−16T1 = AH−16

BASE

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

EMITTER 3

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MARKING DIAGRAM

AYW

XXXXXG

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

SOT−223

CASE 318E

STYLE 1

Rating

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current

Symbol

Value

−80

Unit

Vdc

Adc

CEO

CBO

EBO

−100

−5.0

1.5

= Assembly Location

= Year

= Work Week

XXXXX = Specific Device Code

= Pb−Free Package

Total Power Dissipation

@ T = 25°C (Note 1)

1.5

mW/°C

(*Note: Microdot may be in either location)

Derate above 25°C

Operating and Storage

Temperature Range

T , T

−65 to +150

°C

ORDERING INFORMATION

stg

†

Device

Package

Shipping

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.

x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.

BCP53T1G

SOT−223

(Pb−Free)

1000/Tape & Reel

SBCP53−10T1G SOT−223

(Pb−Free)

1000/Tape & Reel

4000/Tape & Reel

BCP53−10T1G

SOT−223

(Pb−Free)

THERMAL CHARACTERISTICS

SBCP53−10T1G SOT−223

(Pb−Free)

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Ambient

(Surface Mounted)

83.3

°C/W

BCP53−16T1G

SOT−223

(Pb−Free)

SBCP53−16T1G SOT−223

(Pb−Free)

Lead Temperature for Soldering,

0.0625″ from case

Time in Solder Bath

260

°C

BCP53−16T3G

SOT−223

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

September, 2013 − Rev. 10

BCP53T1/D

12 3 4 5

中文翻译

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BCP53-10T1G 替代型号

型号	品牌	替代类型	描述	数据表
BCP53T1G	ONSEMI	类似代替	PNP Silicon Epitaxial Transistors
BF720T1G	ONSEMI	类似代替	NPN Silicon Transistor
BCP53T1	ONSEMI	类似代替	MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

与BCP53-10T1G相关器件

型号	品牌	获取价格	描述	数据表
BCP53-10T3	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 80V V(BR)CEO \| 1.5A I(C) \| SOT-223
BCP5310TA	DIODES	获取价格	PNP SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT223
BCP53-10TA	ZETEX	获取价格	Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4
BCP53-10TA	DIODES	获取价格	1A, 80V, PNP, Si, POWER TRANSISTOR
BCP53-10-TAPE-13	NXP	获取价格	1A, 80V, PNP, Si, POWER TRANSISTOR
BCP53-10-TAPE-7	NXP	获取价格	1A, 80V, PNP, Si, POWER TRANSISTOR
BCP53-10TC	DIODES	获取价格	Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4
BCP53-10TF	ETC	获取价格	BCP53-10T/SOT223/SC-73
BCP53-10T-Q	NEXPERIA	获取价格	80 V, 1 A PNP medium power transistorsProduction
BCP53-10TX	ETC	获取价格	TRANS PNP 80V 1A SOT223

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