BCP53T-Q series
80 V, 1 A PNP medium power transistors
Rev. 1 — 14 June 2023
Product data sheet
1. General description
PNP medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device
(SMD) plastic package.
Table 1. Product overview
Type number
Package
Nexperia
SOT223
NPN comlement
JEDEC
BCP53T-Q
SC-73
BCP56T-Q
BCP53-10T-Q
BCP53-16T-Q
BCP56-10T-Q
BCP56-16T-Q
2. Features and benefits
•
•
•
•
High collector current capability IC and ICM
Three current gain selections
High power dissipation capability
Qualified according to AEC-Q101 and recommended for use in automotive applications
3. Applications
•
•
•
•
•
Linear voltage regulators
MOSFET drivers
High-side switches
Power management
Amplifiers
4. Quick reference data
Table 2. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol
VCEO
IC
Parameter
Conditions
Min
Typ
Max
-80
-1
Unit
V
collector-emitter voltage
collector current
peak collector current
DC current gain
BCP53T-Q
open base
-
-
-
-
-
-
A
ICM
single pulse; tp ≤ 1 ms
-2
A
hFE
VCE = -2 V; IC = -150 mA
[1]
[1]
[1]
63
-
-
-
250
160
250
BCP53-10T-Q
63
BCP53-16T-Q
100
[1] pulsed; tp ≤ 300 μs; δ ≤ 0.02