Datasheet > BCP53-10T-Q

BCP53-10T-Q

更新时间： 2024-03-03 10:08:13

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	279K
描述
80 V, 1 A PNP medium power transistorsProduction

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BCP53-10T-Q 数据手册

Nexperia

BCP53T-Q series

80 V, 1 A PNP medium power transistors

9. Thermal characteristics

Table 7. Thermal characteristics

T_amb= 25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

209

125

Unit

K/W

R_th(j-a)

thermal resistance from junction to ambient

in free air

[1]

[2]

[3]

[4]

[5]

R_(j-sp)

thermal resistance from junction to solder point

[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.

[2] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 1 cm².

[3] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated; mounting pad for collector 6 cm².

[4] Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin-plated and standard footprint.

[5] Device mounted on an FR4 Printed-Circuit-Board (PCB); 4-layer copper; tin-plated; mounting pad for collector 1 cm².

aaa-023489

th(j-a)

(K/W)

duty cycle = 1

0.75

0.50

0.33

0.20

0.10

0.05

0.02

0.01

-5

-4

-3

-2

-1

(s)

FR4 PCB; single-sided copper; tin-plated and standard footprint

Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

BCP53T-Q_SER

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 1 — 14 June 2023

5 / 14

1 2 3 456 7 8...14

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