Datasheet > BCP53-10T-Q

BCP53-10T-Q

更新时间： 2024-03-03 10:08:13

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	279K
描述
80 V, 1 A PNP medium power transistorsProduction

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BCP53-10T-Q 数据手册

Nexperia

BCP53T-Q series

80 V, 1 A PNP medium power transistors

aaa-023493

duty cycle = 1

0.75

th(j-a)

(K/W)

0.50

0.20

0.33

0.10

0.05

0.02

0.01

-5

-4

-3

-2

-1

(s)

FR4 PCB; 4-layer copper; tin-plated; mounting pad for collector 1 cm²

Fig. 7. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

10. Characteristics

Table 8. Characteristics

T_amb= 25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max Unit

V_(BR)CBO

collector-base

I_C= -100 µA; I_E= 0 A

-100

breakdown voltage

V_(BR)CEO

V_(BR)EBO

I_CBO

collector-emitter

breakdown voltage

I_C= -2 mA; I_E= 0 A

I_E= -100 µA; I_C= 0 A

-80

-5

emitter-base

breakdown voltage

collector-base

cut-off current

V_CB= -30 V; I_E= 0 A

-100 nA

V_CB= -30 V; I_E= 0 A; T_j= 150 °C

V_EB= -5 V; I_C= 0 A

-10

μA

I_EBO

h_FE

emitter-base

cut-off current

-100 nA

DC current gain

BCP53T-Q, -10T-Q,

-16T-Q

V_CE= -2 V; I_C= -5 mA

V_CE= -2 V; I_C= -500 mA

V_CE= -2 V; I_C= -150 mA

I_C= -500 mA; I_B= -50 mA

[1] 40

BCP53T-Q

[1] 63

[1] 100

250

BCP53-10T-Q

BCP53-16T-Q

160

250

V_CEsat

collector-emitter

[1]

-500 mV

saturation voltage

V_BE

f_T

base-emitter voltage

transition frequency

collector capacitance

V_CE= -2 V; I_C= -500 mA

[1]

-1

V_CE= -5 V; I_C= -50 mA; f = 100 MHz

V_CB= -10 V; I_E= i_e= 0 A; f = 1 MHz

100

140

MHz

C_c

[1] pulsed; t_p≤ 300 μs; δ ≤ 0.02

BCP53T-Q_SER

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 1 — 14 June 2023

7 / 14

1...4 5 678 9 10...14

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