Datasheet > BCP53-10T-Q

BCP53-10T-Q

更新时间： 2024-03-03 10:08:13

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	279K
描述
80 V, 1 A PNP medium power transistorsProduction

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BCP53-10T-Q 数据手册

Nexperia

BCP53T-Q series

80 V, 1 A PNP medium power transistors

aaa-023498

aaa-023499

-1.2

-1

BEsat

(V)

CESat

(V)

(1)

(2)

-0.8

-0.4

(1)

(2)

(3)

-1

-10

(3)

-2

-10

-1

-10

-1

-10

(mA)

-10

-1

-10

I (mA)

I_C/I_B= 10

(1) T_amb= -55 °C

(2) T_amb= 25 °C

(3) T_amb= 100 °C

(1) T_amb= 100 °C

(2) T_amb= 25 °C

(3) T_amb= -55 °C

Fig. 12. Base-emitter saturation voltage as a function of Fig. 13. Collector-emitter saturation voltage as a

collector current; typical values

function of collector current; typical values

aaa-023501

aaa-023500

-1

(pF)

CESat

(V)

-1

-10

(1)

(2)

(3)

-2

-10

-1

-20

-40

-60

-80

-100

(V)

-10

-1

-10

(mA)

T_amb= 25 °C

(1) I_C/I_B= 50

(2) I_C/I_B= 20

(3) I_C/I_B= 5

f = 1 MHz; T_amb= 25 °C

Fig. 15. Collector capacitance as a function of collector-

base voltage; typical values

Fig. 14. Collector-emitter saturation voltage as a

function of collector current; typical values

BCP53T-Q_SER

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Product data sheet

Rev. 1 — 14 June 2023

9 / 14

1...6 7 8910 11 12...14

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